This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1478A
Silicon NPN epitaxial planar type darlington
For low frequency amplification
Features
Package
Forward current transfer ratio hFE is designed high, which is appropriate to the
driver circuit of motors and printer hammer.
Code
Mini3-G1
Pin Name
1: Base
Ashunt resistor is omitted from the driver.
Absolute Maximum Ratings Ta = 25°C
2: Emitter
3: Collector
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
60
50
Marking Symbol: 2O
V
5
V
Internal Connection
500
mA
mA
mW
°C
C
E
Peak collector current
ICP
750
B
Collector power dissipation
Junction temperature
PC
200
Tj
150
Storage temperature
T
stg
-55 to +150
°C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
60
50
5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
VCBO IC = 100 mA, IE = 0
VCEO IC = 1 mA, IB = 0
VEBO IE = 100 mA, IC = 0
V
V
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
ICBO
IEBO
hFE
VCB = 25 V, IE = 0
100
nA
VEB = 4 V, IC = 0
100
20000
2.5
nA
1,
2
*
Forward current transfer ratio *
VCE = 10 V, IC = 500 mA
4000
1
Collector-emitter saturation voltage *
VCE(sat) IC = 500 mA, IB = 0.5 mA
VBE(sat) IC = 500 mA, IB = 0.5 mA
V
1
Base-emitter saturation voltage *
3.0
V
Transition frequency
fT
VCB = 10 V, IE = -50 mA, f = 200 MHz
200
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Pulse measurement
*
2: Rank classification
*
Rank
Q
R
hFE
4000 to 10000 8000 to 20000
Publication date: October 2008
SJC00414AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1478A
Mini3-G1
Unit: mm
+0.10
−0.05
0.40
+0.10
−0.05
0.16
3
2
1
(0.95)
(0.95)
1.9 ±0.1
+0.20
−0.05
2.90
SJC00414AED
3
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