This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3130
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
+0.10
–0.05
0.40
+0.10
–0.06
0.16
■ Features
3
• High transition frequency fT
• Small collector output capacitance (Common base, input open cir-
cuited) Cob and reverse transfer capacitance (Common emitter) Crb
• Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine pack-
ing
1
2
(0.95) (0.95)
1.9 0.1
+0.20
2.90
–0.05
10˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
15
1: Base
2: Emitter
3: Collector
10
V
3
50
V
EIAJ: SC-59
Mini3-G1 Package
Collector current
IC
PC
Tj
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
150
Marking Symbol: 1S
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCEO
VEBO
ICBO
Conditions
Min
10
3
Typ
Max
Unit
V
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
IC = 2 mA, IB = 0
IE = 10 µA, IC = 0
V
VCB = 10 V, IE = 0
1
µA
1
Forward current transfer ratio *
hFE
VCE = 4 V, IC = 5 mA
hFE2: VCE = 4 V, IC = 100 µA
hFE1: VCE = 4 V, IC = 5 mA
75
220
1.60
2
hFE ratio *
∆hFE
0.75
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 20 mA, IB = 4 mA
0.5
2.5
V
GHz
pF
fT
VCB = 4 V, IE = −5 mA, f = 200 MHz
1.4
1.9
1.4
Collector output capacitance
Cob
VCB = 4 V, IE = 0, f = 1 MHz
(Common base, input open circuited)
Reverse transfer capacitance
(Common emitter)
Crb
VCB = 4 V, IE = 0, f = 1 MHz
0.45
pF
Collector-base parameter
rbb' • CC VCB = 4 V, IE = −5 mA, f = 31.9 MHz
11
ps
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Rank classification
*
Rank
P
Q
hFE
75 to 130
110 to 220
2: ∆hFE = hFE2 / hFE1
*
Publication date: February 2003
SJC00125BED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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