This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA3X152D (MA152WA), MA3X152E (MA152WK)
Silicon epitaxial planar type
Unit: mm
For high-speed switching circuits
+0.10
0.40
–0.05
+0.10
–0.06
0.16
3
■ Features
• Short reverse recovery time trr
• Small terminal capacitance, Ct
1
2
(0.95) (0.95)
1.9 0.1
+0.20
■ Absolute Maximum Ratings Ta = 25°C
2.90
–0.05
Parameter
Reverse voltage
Maximum peak reverse voltage
Symbol
VR
Rating
80
Unit
V
10˚
VRM
IF
80
V
Forward current
Single
Double
Single
Double
Single
Double
100
mA
150
MA3X152D MA3X152E
Cathode 1 Anode 1
Cathode 2 Anode 2
Anode1, 2 Cathode 1, 2
1
2
3
Peak forward
current
IFM
225
mA
mA
EIAJ: SC-59
Mini3-G1 Package
340
Non-repetitive peak
forward surge current
IFSM
500
Marking Symbol
• MA3X152D: MO • MA3X152E: MU
*
750
Junction temperature
Storage temperature
Tj
150
°C
Internal Connection
Tstg
−55 to +150
°C
3
3
Note) : t = 1 s
*
1
2
1
2
E
D
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Forward voltage
Symbol
Conditions
IF = 100 mA
Min
Typ
Max
Unit
V
VF
VR
IR
1.2
Reverse voltage
IR = 100 µA
80
V
Reverse current
VR = 75 V
100
15
2
nA
pF
Terminal capacitance
MA3X152D
MA3X152E
Ct
VR = 0 V, f = 1 MHz
Reverse recovery time * MA3X152D
MA3X152E
trr
IF = 10 mA, VR = 6 V
10
3
ns
Irr = 0.1 IR , RL = 100 Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. : trr measurement circuit
*
Bias Application Unit N-50BU
Input Pulse
tp
Output Pulse
trr
tr
t
10%
IF
t
A
90%
VR
Irr = 0.1 IR
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
Pulse Generator
(PG-10N)
Wave Form Analyzer
(SAS-8130)
Rs = 50 Ω
Ri = 50 Ω
Note) The part numbers in the parenthesis show conventional part number.
Publication date: November 2003
SKF00033CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3X152D, MA3X152E
Characteristics chart of MA3X152E
IF VF
IR VR
VF Ta
102
10
103
102
10
1.2
1.0
0.8
0.6
0.4
0.2
0
Ta = 125°C
75°C
25°C
40
1
IF = 10 mA
Ta = 125°C
10−1
10−2
10−3
1
3 mA
1 mA
75°C
25°C
10−1
10−2
− 20°C
0.1 mA
0
20
60
80
100 120
)
0
0.2
0.4
0.6
0.8
1.0
1.2
−40
0
40
80
120 160
(
(
)
V
Reverse voltage VR
V
(
)
Forward voltage VF
Ambient temperature Ta °C
IR Ta
Ct VR
102
10
10
f = 1 MHz
Ta = 25°C
VR = 80 V
1
40 V
1
10−1
10−2
10−3
10−1
−40
0
40
80
120 160
0
10
20
30
40
50
60
(
)
(
)
V
Ambient temperature Ta °C
Reverse voltage VR
SKF00033CED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
|